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【名师讲座】龙德良：Unconventional types of polyoxometalates with unique electronic properties
名师讲座 龙德良 多金属氧酸盐
2023/6/20
多金属氧酸盐(POM)是一类前过渡金属元素簇状化合物，具有一系列非凡的物理化学性质，是功能非常有前途的纳米材。传统的多金属氧酸盐是由不具有氧化还原性的模板PO43-, SO42-, SiO42-等构建的。基于氧化还原活性模板(如SeO32-, TeO32-)的POMs更受关注，因为它们具有更多样化的结构类型和氧化还原活性，使它们具有进一步的应用潜力。在过去的二十年中，我们团队一直探索POM的前沿领...
Gray tin exhibits novel topological electronic properties in 3D
Gray tin novel topological electronic properties 3D
2017/4/27
In a surprising new discovery, alpha-tin, commonly called gray tin, exhibits a novel electronic phase when its crystal structure is strained, putting it in a rare new class of 3D materials called topo...
Theorists propose new class of topological metals with exotic electronic properties
Theorists topological metals exotic electronic properties
2017/2/16
Researchers at Princeton, Yale, and the University of Zurich have proposed a theory-based approach to characterize a class of metals that possess exotic electronic properties that could help scientist...
Physicists Decipher Electronic Properties of Materials in Work That May Change Transistors
Physicists Electronic Properties Materials Change Transistors
2016/12/13
UT Dallas physicists have published new findings examining the electrical properties of materials that could be harnessed for next-generation transistors and electronics.Dr. Fan Zhang, assistant profe...
Influence of tetragonal distortion on the magnetic and electronic properties of the Heusler compound Co2TiSn from first principles
Influence of tetragonal distortion magnetic and electronic properties first principles
2010/11/22
Using the full potential linearized augmented plane wave plus local orbitals method we determine ab-initio the lattice parameters of tetragonally distorted Co2TiSn in the L21 structure. The tetragonal...
Elastic and electronic properties of hexagonal rhenium sub-nitrides Re3N and Re2N in comparison with hcp-Re and wurtzite-like rhenium mononitride ReN
Elastic electronic properties Re2N in comparison
2010/11/23
Very recently, two new hexagonal rhenium sub-nitrides Re3N and Re2N, which belong to a rather rare group of known metal-rich (M/N > 1) nitrides of heavy 4d,5d metals, have been successfully synthesize...
Electronic properties of new low-temperature superconductors: 3.3K (Ni2P2)(Sr4Sc2O6) and 2.7K (Ni2As2)(Sr4Sc2O6) from first principles
Superconducting (Ni2P2)(Sr4Sc2O6) (Ni2As2)(Sr4Sc2O6) structural electronic properties Fermi surface
2010/11/25
Based on first-principle FLAPW-GGA calculations, we have investigated structural and electronic properties of the recently synthesized tetragonal (space group P4/nmm) nickel-based pnictide oxide super...
Effect of p-d hybridization and structural distortion on the electronic properties of AgAlM2 (M = S, Se, Te) chalcopyrite semiconductors
A. Chalcopyrite A. Semiconductors E. Density Functional Theory E. TB-LMTO
2010/11/18
We have carried out ab-initio calculation and study of structural and elec-tronic properties of AgAlM2 (M = S, Se, Te) chalcopyrite semiconductors using Density Functional Theory (DFT) based self cons...
Ab-Initio Electronic Properties of Rutile TiO2
Ab-Initio Electronic Properties Rutile TiO2
2010/11/18
Self-consistent ab- initio electronic energy band structure of rutile TiO2 are reported within
the local density functional (LDF) formalism. Our first principle, non-relativistic and ground
state ca...
Ab Initio Local Density Approximation Description of the Electronic Properties of Zinc Blende Cadmium Sulfide (zb-CdS)
Electronic Properties Zinc Blende Cadmium Sulfide (zb-CdS)
2010/11/18
Self-consistent ab- initio electronic energy band structure of zinc blende CdS are reported
within the local density functional (LDF) formalism. Our first principle, non-relativistic and
ground stat...
Local Density Approximation Description of Electronic Properties of Wurtzite Cadmium Sulfide (w-CdS)
w-CdS Ab-initio LDA-LCAO-BZW DFT Band gap Ground state
2010/11/22
We present calculated, electronic and related properties of wurtzite cadmium sulfide (w-CdS). Our ab-initio, non-relativistic calculations employed a local density functional approximation (LDA) poten...
Electronic properties of superconductor-semiconductor mesoscopic device
Electronic stub tuner Chaotic Dynamics fluctuations Andreev reflections
2009/2/20
In this paper we studied electronic properties through a semiconductor
quantum dot which is coupled via tunnel barrier to two superconducting
reservoirs. We derive an expression for the conductance
...
Electronic properties of superconductor-semiconductor mesoscopic device
Electronic stub tuner Chaotic Dynamics fluctuations Andreev reflections
2009/1/7
In this paper we studied electronic properties through a semiconductor
quantum dot which is coupled via tunnel barrier to two superconducting
reservoirs. We derive an expression for the conductance
...
Theoretical Study of Electronic Properties of the Semi-Conductors AlN and GaN With the Empirical Pseudopotential Method EPM
Empirical Pseudo-potential Method (EPM) nitride aluminium nitride gallium compounds III-N semi-conductors wide band gap semi-conductors energy gap charge density
2010/4/9
The electronic structure of binary compounds AlN and GaN are presented. We have used the empirical pseudo-potential method. Good agreement between the calculated results and experiment is obtained. Th...
Electronic Properties in a Hierarchical Multilayer Structure
hierarchical structure
multilayer multifractal
2007/8/15
2001Vol.35No.3pp.339-346DOI:
Electronic Properties in a Hierarchical Multilayer Structure
ZHU Chen-Ping1,2 and XIONG Shi-Jie1
1 National Laboratory of Solid State Micros...