搜索结果: 1-15 共查到“物理学 InP”相关记录15条 . 查询时间(0.062 秒)
胶体量子点由于其优异的发光性质，被认为是下一代发光显示和固态照明领域最具潜力的材料之一。与经典的镉基和铅基量子点相比，InP基量子点不含重金属元素，其发光颜色可以覆盖整个可见光范围。因此，InP基量子点被认为是新一代“绿色”环保的发光材料。然而，受制于制备InP基量子点所需要的磷前驱体价格昂贵且易燃易爆，InP基量子点的发展仍然相对滞后。在此，我们引入了廉价和低毒的磷酸乙炔酸钠作为合成高发射InP...
Anomalous propagation of luminescence through bulk n-InP
luminescence through bulk n-InP Physics
2010/11/16
Implementation of a semiconductor as a scintillator with a lattice-matched surface photo-diode for radiation detection requires efficient luminescence collection. Low and heavily doped bulk n-InP has ...
近日，中国科学院上海技术物理研究所有关InGaAs/InP 雪崩二极管（APD）结构的扫描电容显微方法（SCM）研究工作发表在《应用物理快报》（Applied Physics Letters）上（59卷, 093506），该工作得到了技物所三期创新项目资助。
磷化铟(InP)在太赫兹波段的特性研究
太赫兹时域光谱技术 太赫兹光学常数 Drude模型
2009/10/28
太赫兹(THz)时域光谱(TDS)技术，能同时测量幅值和相位信息，因而能检测到物质丰富的物理化学性质，已逐渐成为科学界一大热点。磷化铟(InP)因其载流子寿命短、质量小等优良性能，正逐渐成为产生和检测THz波辐射的首选光电导材料之一。文章利用THz-TDS测试技术，在室温氮气环境中，对n型0.35 Ω·cm的InP材料在0.2～4 THz波段的特性进行了研究。文章根据物理传输模型，利用更准确的迭代...
InP纳米颗粒的超快动力学和光学非线性
InP 纳米颗粒 泵浦-探测
2009/10/26
通过飞秒泵浦-探测方法测量了波长为800 nm时InP半导体纳米颗粒激发态的瞬态动力学过程。观察到一个快速的光致漂白建立和一个漂白的恢复过程，分析饱和吸收的来源可能是带填充效应引起跃迁的饱和吸收。对于漂白恢复中的快过程是由于自由载流子的弛豫，而慢成分是由于光激发载流子在很短的时间内受陷于表面态形成的限域载流子的弛豫。通过飞秒光克尔效应(OKE)方法测量材料的超快非线性响应曲线，计算了材料的光学三阶...
掺硫和在不同温度下InP的正电子湮没研究
正电子湮没 InP半导体 温度
2009/5/21
用正电子湮设方法研究了掺硫的InP载流于浓度(n)、迁移率和温度对空位浓度的影响,并讨论了它们对空位浓度影响的机理.探讨了空位类型.
GaAs与InP半导体光导开关特性实验研究
光导开关 砷化镓 磷化铟 化合物半导体
2007/12/8
利用Ⅲ-Ⅴ族化合物半导体材料砷化镓(GaAs)和磷化铟(InP)及其掺杂材料制作的光导开关具有很好的时间响应及高功率输出特性.比较了这两种材料制作的不同电极间隙类型的光导开关的开关时间响应速度、导通光能与饱和触发激光能量、线性与非线性工作模式及触发稳定性等特性.结果表明,利用InP和GaAs两种材料制作的光导开关都具有达到皮秒级的超快时间响应,其对时间最佳响应与偏置电场有关.两种开关的多次触发时间...
人工欧泊填充InP后的形貌和反射谱特性
2007/8/20
制备了人工opal晶体模板,运用MOCVD方法在SiO2人工opal球体间填充了高折射率的InP晶体,选择了MOCVD生长InP的有关参数.样品扫描电子显微镜及反射谱结果检测显示,InP晶体在二氧化硅间隙中的生长是均匀的,具有较好的结晶质量;高介电常数的InP的填充使人工欧泊光子晶体的光子禁带效应增强,反射峰移向长波长区.光学特性检测结果与理论计算值得到较好的符合.
期刊信息
篇名
1.78μm strained InGaAs-InGaAsP -InP distributed feedback quantum well lasers
语种
英文
撰写或编译
作者
Shurong Wang,Wang hui,Wang baojun,Zhu Hongliang,Zhang jing,Ding ying,Zhao lingjuan,Zhou fan,Wang luf...
Optical and Electrical Properties of Te Doped AlGaAsSb/AlAsSb Bragg Mirrors on InP
Semiconductor Bragg mirror AlGaAs/AlAsSb
2010/10/13
We present a comparative study carried out on the optical and electrical characteristics of undoped and Te doped AlGaAsSb/AlAsSb Bragg mirrors with 6.5 pairs of layers and bulk undoped and Te doped Al...
Evidence of the Miniband Formation in InGaAs/InP Superlattices
Superlattices Plasmons Raman scattering
2010/9/25
The formation of the miniband electron energy structure was explored in doped InGaAs=InP superlattices with different periods. The analysis of the Raman data allowed us to conclude that in spite of th...
Photoluminescence Characterization of Al/Al2O3/InP MIS Structures passivated by anodic oxidation
Indium phosphide MIS structures Photoluminescence
2010/4/12
Metal-insulator-semiconductor (MIS) structures were produced by electron beam evaporation of Al2O3 on InP. Polyphosphate thin films of thickness 100-150 Å were used to passivate the interface In...
Optical Absorption and Photoluminescence Measurements in InP and InP:Fe Bulk Crystals and Inspection of the Relations Between these Measurements
InP InP:Fe photoluminescence absorption semi-insulating band gap narrowing
2010/4/14
Optical absorption and photoluminescence (PL) measurements were carried out in both undoped and Fe-doped samples and the effect of Fe doping on absorption and PL spectra were studied. The results show...
A GaInAsP/InP Vertical Cavity Surface Emitting Laser for 1.5 m m operation
distributed Bragg reflector vertical cavity surface emitting laser
2010/4/16
We present the results of our studies concerning the pulsed operation of a bulk GaInAsP/InP vertical cavity surface emitting laser (VCSEL). The device is tailored to emit at around 1.5 m m at room tem...
Butt-Coupling Loss of 0.1 dB/Interface in InP/InGaAs Multi-Quantum-Well Waveguide-Waveguide Structures grown by Selective Area Chemical Beam Epitaxy
integrated optics butt-coupling SAE CBE
2010/4/16
The lateral coupling of waveguiding structures in both [011] and [0\bar{1}1] directions is studied using embedded selective area epitaxy by Chemical Beam Epitaxy. All growth steps are carried out unde...