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New structural model for GeO2/Ge interface: A first-principles study
New structural model for GeO2/Ge interface first-principles study
2010/11/24
First-principles modeling of a GeO2/Ge(001) interface reveals that sixfold GeO2, which is derived from cristobalite and is different from rutile, dramatically reduces the lattice mismatch at the inter...
低温下用MBE方法生长了Ge/Si超晶格,X射线反射及横向散射研究表明,Ge亚层上下表面的粗糙度呈反对称,下表面大的粗糙度来源于Ge向Si亚层中扩散形成SiGe混合组分结构,这种组分结构可以用一平均成分的SiGe合金层加以拟合,从而使得各亚层均有一个合理的粗糙度,旋转样品进行的X射线散射研究表明,这种SiGe的混合是各向同性的,这与透射电子显微镜的研究结构相一致.
退火Ge/Fe多层膜的固相反应与磁性
2007/7/28
期刊信息
篇名
退火Ge/Fe多层膜的固相反应与磁性
语种
中文
撰写或编译
作者
李铁，李玉芝，张裕恒
第一作者单位
刊物名称
物理学报
页面
1996，45（2）
出版日期
1996年
月
日
文章标识(ISSN)
相关项目
固相扩散与反应的Fe/M多层膜微结构和物性研究
Thermal coefficients of the electrical resistivity of Ge nanocrystals on Si for infrared detectors
2007/7/28
期刊信息
篇名
Thermal coefficients of the electrical resistivity of Ge nanocrystals on Si for infrared detectors
语种
英文
撰写或编译
撰写
作者
Xiying Ma,Weilin Shi
第一作者单位
绍兴文理学院
刊物名称
Optics Communications
页面
Vol.238,30...
Pseudopotential-Based Full Zone k . p Technique for Indirect Bandgap Semiconductors: Si, Ge, Diamond and SiC
Band structure indirect bandgap semiconductors pseudopotentials
2010/4/9
The k . p is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled bands ...
AC conductivity and Dielectric Study of Chalcogenide Glasses of Se-Te-Ge System
correlated barrier hopping dielectric constants
2010/4/12
The ac conductivity and dielectric properties of glassy system SexTe79 - xGe21, with x = 11, 14, 17 at.%, has been studied at temperatures 300 to 450 K and over a wide range of frequencies (50 Hz to 5...
Properties of MOS Capacitors Produced on SiGe Formed by Ge-implanted Si
Metal-oxide-semiconductor quasi-static
2010/4/15
Metal-oxide-semiconductor (MOS) capacitors fabricated on Ge-implanted Si have been investigated by using C-V and G-V measurements. The control sample on pure Si substrate yielded normal C-V and G-V ch...