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Theoretical studies of localization, anomalous diffusion and ergodicity breaking require solving the electronic structure of disordered systems. We use free probability to approximate the ensembleaver...
A formulation for the energy-averaged local valence band density of states of amorphous silicon carbide is derived. To this end, sp3-type hybrid orbitals are employed.
A theoretical formulation for the phonon density of states of amorphous germanium in the infrared range is proposed. This formulation is based upon the quasi-harmonic approximation and is compared wit...
The concept of total electronic density of states calculated for small clusters in amorphous solids is presented in a new way by using a mathematical formulation based upon matrix calculus. Furthermor...
Phonon density of states of amorphous semiconductors for the far-infrared range is examined analytically. On the basis of this formulation, optical absorption corresponding to structural disorder is e...
The electronic density of states for very small clusters of amorphous germanium is calculated by using bonding orbitals. In this context, the Born model is considered as well as Pauling-type hybridize...

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