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Simulation of storage time versus reverse bias current for p+n and pin diodes
Reverse recovery pin diode semiconductor devices semiconductor devices simulation
2011/3/22
In this study, the reverse-recovery behaviors of pin and p+n diodes were simulated as a function of the reverse current and carrier lifetime. For this purpose, a 1-D simulation program was written to ...
Optical and electrical characterization of reverse bias luminescence in InGaN light emitting diodes
GaN LED electroluminescence reverse-bias leakage current hot carrier
2011/5/5
This study investigates the reliability physics of the reverse bias luminescence (RBL) of
InGaN/GaN light emitting diodes. Optical and electrical characterization techniques including
surface temper...
Origins of Reverse Bias Currents in a Typical BPW34 Photodiode
BPW34 PIN Photodiode reverse bias current transport
2010/4/12
Measurements of the dark reverse current in a typical BPW34 silicon photodiode have been made in the temperature range 100-300 K at various reverse bias voltages ranging from 0 to 60 V. Various transp...