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Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction
Strain determination Si channel field effect transistor
2010/11/24
SiGe islands are used to induce tensile strain in the Si channel of Field E ect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ray di raction experime...
Photo Organic Field Effect Transistor´s Properties
Organic Field Effect Transistor Copper Phthalocyanine Metal-Semiconductor Schottky Junction Phototransistor
2010/4/9
A thin organic films of p-type semiconducting copper phthalocynanine (CuPc) film and semitransparent Al film were deposited in sequence by vacuum evaporation on glass substrate with Ag source and drai...