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Theoretical Study of Electronic Properties of the Semi-Conductors AlN and GaN With the Empirical Pseudopotential Method EPM
Empirical Pseudo-potential Method (EPM) nitride aluminium nitride gallium compounds III-N semi-conductors wide band gap semi-conductors energy gap charge density
2010/4/9
The electronic structure of binary compounds AlN and GaN are presented. We have used the empirical pseudo-potential method. Good agreement between the calculated results and experiment is obtained. Th...