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西安电子科技大学高频电子线路课件chapter5 Low Noise Amplifiers。
Analysis of 1 noise in MOSFET circuits is typically performed in the frequency domain using the standard stationary 1 noise model. Recent experimental results, however, have shown that the estimates u...
State-of-the-art RF front-end circuits are typically designed to operate at a single frequency. With an increasing number of available wireless standards, personal mobile communication devices require...
In this work, power supply noise contribution, at a particular node on the power grid, from clock/power gated blocks is maximized at particular time and the synthetic gating patterns of the blocks tha...
In this paper a two dimensional (2D) electromagnetic Bandgap (EBG) structure is proposed for multi band noise mitigation in PWR/GND plane pairs. Excellent noise suppression (-60 dB) is achieved in mul...
It is known that if harmonic spectra are decreased, then acoustic noise also decreased. Hence, this paper deals with a new random switching strategy using DSP TMS320F2812 to decrease the harmonics ...
Emerging Bio-engineering fields such as Brain Computer Interfaces, neuroprothesis devices and modeling and simulation of neural networks have led to increased research activity in algorithms for th...
This paper presents the design of a source injection parallel coupled (SIPC) quadrature voltage controlled oscillator (QVCO), realized in both −gm pMOS cross coupled switching stage and m ...
A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capacitors in order to characterise their quality and reliability. The model of Ta−Ta2O5−Mn...
Mobile communication is one of the fastest growing markets and demands a significant part of the integrated circuitsales. In the past transceivers in the GHz range have required silicon bipolar transi...
In this paper, noise characterization and modeling of a double polysilicon self-aligned bipolar transistor are presented. The device has been characterized in terms of noise and scattering parameters ...
In this communication, an accurate mathematical model for the noise figure of a high electron mobility transistor is developed. This model represents a substantial improvement of the Fukui model. In f...
Knowledge on the conduction mechanism of thick film resistors are limited and often contradictory.In this paper investigations based on temperature dependent 1/f noise measurements are reported.
Experimental results concerning the dependence of the sheet resistivity and the noise coefficient on the grain size and the volume fraction, respectively, of the metallic-like component in Bi2Ru2O7-ba...
Noise has been measured in a number of biased solid tantalum capacitors at frequencies down to 0.01 Hz. The noise current was found to have a 1/f power spectrum, and the amplitude varied with the bias...

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