搜索结果: 1-8 共查到“电子科学与技术 Under Pressure”相关记录8条 . 查询时间(0.042 秒)
Characteristics of ZnO Layers Grown on GaN Template Under Argon Pressure by Pulsed Laser Deposition
ZnO Pulsed Laser Deposition Buffer layer Annealing
2009/6/1
We employed epi-GaN substrates for ZnO film growth, and studied the deposition and post-annealing effects. ZnO films were grown by pulsed laser deposition (PLD) method. The as-grown films were anneale...
Quenching of High-Pressure Phases of Silicon Using Femtosecond Laser-driven Shock Wave
Femtosecond laser Silicon Shock wave
2009/6/1
High-pressure phases which are Β-Sn, Imma and simple hexagonal structures of silicon are quenched using an intense femtosecond laser-driven shock wave. These high-pressure phases have never synthesize...
期刊信息
篇名
Electronic and crystal structures of Osmium under high pressure
语种
英文
撰写或编译
撰写
作者
马琰铭 等人
第一作者单位
吉林大学超硬材料国家重点实验室
刊物名称
Phys. Rev. B 72 (17)
页面
174103: 1-6
出版日期
2005年
11月
7日
文章标识(ISSN)
1098-0121
...
期刊信息
篇名
Effect of Electron-Phonon Interaction on Surface States in Zinc-Blende GaN, AlN, and InN under Pressure
语种
英文
撰写或编译
撰写
作者
闫祖威1,2,班士良2,梁希侠2
第一作者单位
1 内蒙古农业大学理学院；2 内蒙古大学理工学院
刊物名称
Eur. Phys. J. B ...
Pressure dependence of electron-IO-phonon interaction in multi-interface heterostructure systems
2007/7/28
期刊信息
篇名
Pressure dependence of electron-IO-phonon interaction in multi-interface heterostructure systems
语种
英文
撰写或编译
撰写
作者
闫祖威1,2,班士良2,梁希侠2
第一作者单位
1 内蒙古农业大学理学院；2 内蒙古大学理工学院
刊物名称
Int. J. of Mod. Phys. B...
Dependence on the Partial Pressure of Oxygen on the Shift in the Energy Band-gap of CdO Thin Films in the Visible Region
CdO thin films Shift in the energy band-gap Partial pressure of oxygen
2010/12/8
In this paper, the dependence on the partial pressure of oxygen of the shift in the energy band-gap of CdO thin films for the visible region is investigated from the theoretical point of view on an ex...
The Influence of Load Pressure on Properties of Wafer-Bonding Interface
Wafer bonding load pressure the optical and electrical quality interface
2010/7/15
Wafer bonding offers a new degree of freedom to integrate mismatched materials while maintaining high optical and electrical quality interfaces. The electrical and optical characteristics of the wafer...
Thermoelectric Power of YBa2Cu3O7-X and YBa2Cu4O8 Under Pressure
Thermoelectric Power YBa2Cu3O7-X YBa2Cu4O8 Pressure
2010/12/16
Thermoelectric power (TEP) of YBa2Cu3O7-X (123) and YBa2Cu4O8 (124) samples are measured as a function of pressure. The TEP of an as-sintered 123 polycrystalline sample shows a broad maximum around 1....